標題: SCR device with double-triggered technique for on-chip ESD protection in sub-quarter-micron silicided CMOS processes
作者: Ker, MD
Hsu, KC
電機學院
College of Electrical and Computer Engineering
關鍵字: double-triggered technique;electrostatic discharge (ESD);ESD protection circuit;silicon-controlled rectifier (SCR)
公開日期: 1-Sep-2003
摘要: Turn-on efficiency is the main concern for silicon-controlled rectifier (SCR) devices used as on-chip electrostatic discharge (ESD) protection circuit, especially in deep sub-quarter-micron CMOS processes with much thinner gate oxide. A novel double-triggered technique is proposed to speed up the turn-on speed of SCR devices for using in on-chip ESD protection circuit to effectively protect the much thinner gate oxide in sub-quarter-micron CMOS processes. From the experimental results, the switching voltage and turn-on time of such double-triggered SCR (DT_SCR) device has been confirmed to be significantly reduced by this double-triggered technique.
URI: http://dx.doi.org/10.1109/TDMR.2003.815192
http://hdl.handle.net/11536/27557
ISSN: 1530-4388
DOI: 10.1109/TDMR.2003.815192
期刊: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
Volume: 3
Issue: 3
起始頁: 58
結束頁: 68
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