標題: | Effect of mechanical-strain-induced defect generation on the performance of flexible amorphous In-Ga-Zn-O thin-film transistors |
作者: | Liao, Po-Yung Chang, Ting-Chang Su, Wan-Ching Chen, Yu-Jia Chen, Bo-Wei Hsieh, Tien-Yu Yang, Chung-Yi Huang, Yen-Yu Chang, Hsi-Ming Chiang, Shin-Chuan 電子物理學系 Department of Electrophysics |
公開日期: | Dec-2016 |
摘要: | In this study, we investigate the effect of mechanical strain on the performance of flexible amorphous In-Ga-Zn-O (a-.InGaZnO) thin-film transistors. Drain current-gate voltage (ID-VG) and capacitance-voltage (C-V) transfer curves are measured to analyze the degradation behavior. The ID-VG characteristic exhibits a clear negative shift under mechanical strain regardless of the tension or compression state. In addition, the C-V characteristic curves show a leftward shift with extra distortion or stretching out under mechanical strain. This indicates that InGaZnO generates additional defects under this mechanical strain, a phenomenon that can be attributed to the generation of mechanical-strain-induced oxygen vacancies on the flexible a-InGaZnO TFTs. (C) 2016 The Japan Society of Applied Physics. |
URI: | http://dx.doi.org/10.7567/APEX.9.124101 http://hdl.handle.net/11536/132791 |
ISSN: | 1882-0778 |
DOI: | 10.7567/APEX.9.124101 |
期刊: | APPLIED PHYSICS EXPRESS |
Volume: | 9 |
Issue: | 12 |
Appears in Collections: | Articles |