標題: Effect of mechanical-strain-induced defect generation on the performance of flexible amorphous In-Ga-Zn-O thin-film transistors
作者: Liao, Po-Yung
Chang, Ting-Chang
Su, Wan-Ching
Chen, Yu-Jia
Chen, Bo-Wei
Hsieh, Tien-Yu
Yang, Chung-Yi
Huang, Yen-Yu
Chang, Hsi-Ming
Chiang, Shin-Chuan
電子物理學系
Department of Electrophysics
公開日期: Dec-2016
摘要: In this study, we investigate the effect of mechanical strain on the performance of flexible amorphous In-Ga-Zn-O (a-.InGaZnO) thin-film transistors. Drain current-gate voltage (ID-VG) and capacitance-voltage (C-V) transfer curves are measured to analyze the degradation behavior. The ID-VG characteristic exhibits a clear negative shift under mechanical strain regardless of the tension or compression state. In addition, the C-V characteristic curves show a leftward shift with extra distortion or stretching out under mechanical strain. This indicates that InGaZnO generates additional defects under this mechanical strain, a phenomenon that can be attributed to the generation of mechanical-strain-induced oxygen vacancies on the flexible a-InGaZnO TFTs. (C) 2016 The Japan Society of Applied Physics.
URI: http://dx.doi.org/10.7567/APEX.9.124101
http://hdl.handle.net/11536/132791
ISSN: 1882-0778
DOI: 10.7567/APEX.9.124101
期刊: APPLIED PHYSICS EXPRESS
Volume: 9
Issue: 12
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