Title: Reliability study of high-k La2O3/HfO2 and HfO2/La2O3 stacking layers on n-In0.53Ga0.47As metal-oxide-semiconductor capacitor
Authors: Chu, Chung-Ming
Lin, Yueh-Chin
Lee, Wei-I
Dee, Chang Fu
Wong, Yuen-Yee
Majlis, Burhanuddin Yeop
Salleh, Muhamad Mat
Yap, Seong Ling
Chang, Edward Yi
材料科學與工程學系
電子物理學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electrophysics
Department of Electronics Engineering and Institute of Electronics
Issue Date: Feb-2016
Abstract: This study investigates the time-dependent dielectric breakdown (TDDB) characteristics of La2O3/HfO2 and HfO2/La2O3 stacking layers on an n-In0.53Ga0.47As metal-oxide-semiconductor capacitor. Both designs improved the reliability compared with a single layer of HfO2. The TDDB followed the thermochemical E model. The current transportation mechanism changed from thermionic emission to Frenkel-Poole emission because of the traps creation under voltage stress. Both designs resulted in similar lifespans and voltage accelerating factors. However, the La2O3/HfO2 design had a longer lifespan because of the lower interface trap density and insertion of the HfO2 diffusion barrier layer between La2O3 and n-In0.53Ga0.47As. The oxide stacks exhibited excellent reliability and achieved a lifespan of 28.4 years. (C) 2016 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/APEX.9.021203
http://hdl.handle.net/11536/132808
ISSN: 1882-0778
DOI: 10.7567/APEX.9.021203
Journal: APPLIED PHYSICS EXPRESS
Volume: 9
Issue: 2
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