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dc.contributor.authorLee, Chao-Kueien_US
dc.contributor.authorCheng, Cheng-Mawen_US
dc.contributor.authorWeng, Shih-Changen_US
dc.contributor.authorChen, Wei-Chuanen_US
dc.contributor.authorTsuei, Ku-Dingen_US
dc.contributor.authorYu, Shih-Hsunen_US
dc.contributor.authorChou, Mitch Ming-Chien_US
dc.contributor.authorChang, Ching-Wenen_US
dc.contributor.authorTu, Li-Weien_US
dc.contributor.authorYang, Hung-Duenen_US
dc.contributor.authorLuo, Chih-Weien_US
dc.contributor.authorGospodinov, Marin M.en_US
dc.date.accessioned2019-04-03T06:37:30Z-
dc.date.available2019-04-03T06:37:30Z-
dc.date.issued2016-11-18en_US
dc.identifier.issn2045-2322en_US
dc.identifier.urihttp://dx.doi.org/10.1038/srep36538en_US
dc.identifier.urihttp://hdl.handle.net/11536/132811-
dc.description.abstractA topological insulator (TI) is a quantum material in a new class with attractive properties for physical and technological applications. Here we derive the electronic structure of highly crystalline Sb2Te2Se single crystals studied with angle-resolved photoemission spectra. The result of band mapping reveals that the Sb2Te2Se compound behaves as a p-type semiconductor and has an isolated Dirac cone of a topological surface state, which is highly favored for spintronic and thermoelectric devices because of the dissipation-less surface state and the decreased scattering from bulk bands. More importantly, the topological surface state and doping level in Sb2Te2Se are difficult to alter for a cleaved surface exposed to air; the robustness of the topological surface state defined in our data indicates that this Sb2Te2Se compound has a great potential for future atmospheric applications.en_US
dc.language.isoen_USen_US
dc.titleRobustness of a Topologically Protected Surface State in a Sb2Te2Se Single Crystalen_US
dc.typeArticleen_US
dc.identifier.doi10.1038/srep36538en_US
dc.identifier.journalSCIENTIFIC REPORTSen_US
dc.citation.volume6en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000388070900001en_US
dc.citation.woscount4en_US
Appears in Collections:Articles


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