標題: AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications
作者: Lin, Yen-Ku
Noda, Shuichi
Lo, Hsiao-Chieh
Liu, Shih-Chien
Wu, Chia-Hsun
Wong, Yuen-Yee
Luc, Quang Ho
Chang, Po-Chun
Hsu, Heng-Tung
Samukawa, Seiji
Chang, Edward Yi
材料科學與工程學系
光電系統研究所
電子工程學系及電子研究所
國際半導體學院
Department of Materials Science and Engineering
Institute of Photonic System
Department of Electronics Engineering and Institute of Electronics
International College of Semiconductor Technology
關鍵字: AlGaN/GaN;HEMT;gate recess;neutral beam etching;high frequency measurement
公開日期: Nov-2016
摘要: The electrical performances of gate-recessed AlGaN/GaN high-electron mobility transistors (HEMTs) fabricated using the damage-free neutral beam etching (NBE) method are demonstrated. The NBE method could eliminate the plasma-induced defects generated by irradiating ultraviolet/VUV photons in the conventional inductively coupled plasma reactive ion etching method. The AlGaN/GaN HEMT device fabricated using the new gate recess process exhibited superior electrical performances, including a maximum drain current density (I-DS,I-max) of 1.54 A/mm, low 1/f noise, a current-gain cutoff frequency (f(T)) of 153 GHz, a maximum frequency of oscillation (f(MAX)) of 167 GHz, and a minimum noise figure (NFmin) of 3.28 dB with an associated gain (G(AS)) of 5.06 dB at 54 GHz. Such superior characteristics confirm the inherent advantages of adopting the damage-free NBE process in fabricating GaN devices for millimeter-wave applications.
URI: http://dx.doi.org/10.1109/LED.2016.2609938
http://hdl.handle.net/11536/132826
ISSN: 0741-3106
DOI: 10.1109/LED.2016.2609938
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 37
Issue: 11
起始頁: 1395
結束頁: 1398
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