標題: Study of Inherent Gate Coupling Nonuniformity of InAs/GaSb Vertical TFETs
作者: Hsu, Ching-Yi
Zeng, Yuping
Chang, Chen-Yen
Hu, Chenming
Chang, Edward Yi
材料科學與工程學系
電機學院
電子工程學系及電子研究所
Department of Materials Science and Engineering
College of Electrical and Computer Engineering
Department of Electronics Engineering and Institute of Electronics
關鍵字: Band offset;coupling ratio (CR);InAs/GaSb tunneling FETs (TFETs);nonuniformity;quantum confinement
公開日期: 十一月-2016
摘要: An electrostatic nonuniformity in the cantilever vertical tunneling FETs intrinsically exists in the InAs/GaSb junction to InAs cantilever transition region. The effects of the coupling ratio (CR) nonuniformity are investigated in this paper. The results show that the switching characteristics are degraded by the CR nonuniformity, especially in the case of large InAs/GaSb band offset. This paper also reveals that the nonuniformity in InAs/GaSb vertical tunneling FETs can be mitigated with the optimized band offset of heterojunction, scaling of oxide thickness, and acute angle etching profile.
URI: http://dx.doi.org/10.1109/TED.2016.2612830
http://hdl.handle.net/11536/132829
ISSN: 0018-9383
DOI: 10.1109/TED.2016.2612830
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 63
Issue: 11
起始頁: 4267
結束頁: 4272
顯示於類別:期刊論文