標題: | Study of Inherent Gate Coupling Nonuniformity of InAs/GaSb Vertical TFETs |
作者: | Hsu, Ching-Yi Zeng, Yuping Chang, Chen-Yen Hu, Chenming Chang, Edward Yi 材料科學與工程學系 電機學院 電子工程學系及電子研究所 Department of Materials Science and Engineering College of Electrical and Computer Engineering Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Band offset;coupling ratio (CR);InAs/GaSb tunneling FETs (TFETs);nonuniformity;quantum confinement |
公開日期: | 十一月-2016 |
摘要: | An electrostatic nonuniformity in the cantilever vertical tunneling FETs intrinsically exists in the InAs/GaSb junction to InAs cantilever transition region. The effects of the coupling ratio (CR) nonuniformity are investigated in this paper. The results show that the switching characteristics are degraded by the CR nonuniformity, especially in the case of large InAs/GaSb band offset. This paper also reveals that the nonuniformity in InAs/GaSb vertical tunneling FETs can be mitigated with the optimized band offset of heterojunction, scaling of oxide thickness, and acute angle etching profile. |
URI: | http://dx.doi.org/10.1109/TED.2016.2612830 http://hdl.handle.net/11536/132829 |
ISSN: | 0018-9383 |
DOI: | 10.1109/TED.2016.2612830 |
期刊: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
Volume: | 63 |
Issue: | 11 |
起始頁: | 4267 |
結束頁: | 4272 |
顯示於類別: | 期刊論文 |