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dc.contributor.authorJayadevan, KPen_US
dc.contributor.authorLiu, CYen_US
dc.contributor.authorTseng, TYen_US
dc.date.accessioned2014-12-08T15:18:24Z-
dc.date.available2014-12-08T15:18:24Z-
dc.date.issued2005-09-01en_US
dc.identifier.issn0002-7820en_US
dc.identifier.urihttp://dx.doi.org/10.1111/j.1551-2916.2005.00441.xen_US
dc.identifier.urihttp://hdl.handle.net/11536/13282-
dc.description.abstractNanocrystatfine chi Ag-(1-x)Ba0.5Sr0.5TiO3(Ag-BST, 0 <= x <= 0.1, where x is the mole fraction of Ag) thin films have been deposited on Pt/Ti/SiO2/Si substrates by a sol-gel method. The films have been characterized by X-ray diffraction (XRD), scanning electron microscopy, and X-ray photoelectron spectroscopy (XPS). The core-level XPS of oxygen (O1s) of the Ag-BST films indicate that an optimum amount of Ag (x = 0.02 or 2 mol%) enhances the binding energy of oxygen, possibly through a mechanism in which the electrophilic oxygen dissociates from the Ag surface and fills the oxygen vacancies. Similarly, the binding energy of Ag (Ag3d) shows a shift toward a higher value with increasing Ag up to 4 mol%, probably because of the chemical shift of Ag in BST along the surface layers, surface relaxation, or changes in the Fermi level of small Ag particles in the solid solution range of Ag in BST fillms (x <= 0.04). The leakage current density of 2 mol% Ag-added BST (similar to 10(-6) A/cm(2)) is less by about an order of magnitude than pure BST at an electric field of 200 kV/cm. A defect model is proposed to explain the observed leakage current density of Ag-BST films satisfactorily.en_US
dc.language.isoen_USen_US
dc.titleSurface chemical and leakage current density characteristics of nanocrystalline Ag-Ba0.5Sr0.5TiO3 thin filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1111/j.1551-2916.2005.00441.xen_US
dc.identifier.journalJOURNAL OF THE AMERICAN CERAMIC SOCIETYen_US
dc.citation.volume88en_US
dc.citation.issue9en_US
dc.citation.spage2456en_US
dc.citation.epage2460en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000231634800021-
dc.citation.woscount5-
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