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dc.contributor.authorLi, GongTanen_US
dc.contributor.authorZhan, Runzeen_US
dc.contributor.authorYang, Bo-Ruen_US
dc.contributor.authorLiu, Chuanen_US
dc.contributor.authorDong, ChengYuanen_US
dc.contributor.authorLee, Chia-Yuen_US
dc.contributor.authorWu, Yuan-Chunen_US
dc.contributor.authorLu, Po-Yenen_US
dc.contributor.authorDeng, ShaoZhien_US
dc.contributor.authorShieh, Han-Ping D.en_US
dc.contributor.authorXu, NingShengen_US
dc.date.accessioned2017-04-21T06:55:58Z-
dc.date.available2017-04-21T06:55:58Z-
dc.date.issued2016-11en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2016.2608970en_US
dc.identifier.urihttp://hdl.handle.net/11536/132832-
dc.description.abstractInstability of amorphous InGaZnO thin-film transistors (a-IGZO TFTs) remains an obstacle for commercialization. Here, we systematically discuss the effect of nitrogen incorporation on a-IGZO TFT stability and developed Ar/O-2/N-2 atmosphere to improve the stability under stressing in different conditions. Based on X-ray photoelectron spectrometer results, it is revealed that the positive gate bias stress (PGBS) stability is significantly improved due to microscopically passivated metal-oxygen bonds. Yet, the negative gate bias and light stress (NBLS) stability is seriously deteriorated with heavily nitrogen incorporation probably due to the bandgap narrowing effect. By optimizing a mixed O-2/N-2 atmosphere, the subgap states are finely tuned to afford optimal performance and stability. The developed IGZO TFTs exhibit mobility (12.67 cm(2)/Vs), small shift of threshold voltage under PGBS (reduced by 64% as compared with the pristine a-IGZO TFTs), and good negative gate bias stability and with NBLS stability as well.en_US
dc.language.isoen_USen_US
dc.subjectInGaZnOen_US
dc.subjectnitrogen incorporationen_US
dc.subjectreliabilityen_US
dc.subjectTFTsen_US
dc.titleSubgap State Engineering Using Nitrogen Incorporation to Improve Reliability of Amorphous InGaZnO Thin-Film Transistors in Various Stressing Conditionsen_US
dc.identifier.doi10.1109/TED.2016.2608970en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume63en_US
dc.citation.issue11en_US
dc.citation.spage4309en_US
dc.citation.epage4314en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000389340400024en_US
Appears in Collections:Articles