Title: A ReRAM-Based 4T2R Nonvolatile TCAM Using RC-Filtered Stress-Decoupled Scheme for Frequent-OFF Instant-ON Search Engines Used in IoT and Big-Data Processing
Authors: Chang, Meng-Fan
Huang, Lie-Yue
Lin, Wen-Zhang
Chiang, Yen-Ning
Kuo, Chia-Chen
Chuang, Ching-Hao
Yang, Keng-Hao
Tsai, Hsiang-Jen
Chen, Tien-Fu
Sheu, Shyh-Shyuan
交大名義發表
National Chiao Tung University
Keywords: Filter;nonvolatile TCAM;nonvolatile;ReRAM;search engine;TCAM
Issue Date: Nov-2016
Abstract: This paper outlines the RC-filtered stress-decoupled (RCSD) 4T2R nonvolatile TCAM (nvTCAM) with the following benefits: 1) reduced NVM-stress; 2) reduced ML parasitic load; and 3) suppression of match-line (ML) leakage current from match cells. The RCSD-4T2R cell achieves a 6x reduction in NVM-stress, a 2x increase in maximum wordlength, and a 2x reduction in search delay. In this paper, we also outline two search schemes, referred to as dynamic source-line pulse controlled (DSL-PC) search and dataline-pulse controlled (DL-PC) search, which were developed specifically for the RCSD-4T2R nvTCAM. We fabricated a 128 x 32 b RCSD-4T2R nvTCAM macro with HfO ReRAM using a 180 nm CMOS process. Using the DSL-PC and DL-PC schemes, the measured search delay of the RCSD-4T2R nvTCAM macro was 1.2 ns under typical VDD.
URI: http://dx.doi.org/10.1109/JSSC.2016.2602218
http://hdl.handle.net/11536/132866
ISSN: 0018-9200
DOI: 10.1109/JSSC.2016.2602218
Journal: IEEE JOURNAL OF SOLID-STATE CIRCUITS
Volume: 51
Issue: 11
Begin Page: 2786
End Page: 2798
Appears in Collections:Articles