標題: | Excess low-frequency noise in ultrathin oxide n-MOSFETs arising from valence-band electron tunneling |
作者: | Wu, JW You, JW Ma, HC Cheng, CC Hsu, CF Chang, CS Huang, GW Wang, TH 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | low-frequency noise;random telegraph signal;ultrathin oxide MOSFET;valence-band tunneling |
公開日期: | 1-九月-2005 |
摘要: | Low-frequency flicker noise in analog n-MOSFETs with 15-angstrom gate oxide is investigated. A new noise generation mechanism resulting from valence-band electron tunneling is proposed. In strong inversion conditions, valence-band electron tunneling from Si substrate to polysilicon gate takes place and results in the splitting of electron and hole quasi-Fermi-levels in the channel. The excess low-frequency noise is attributed to electron and hole recombination at interface traps between the two quasi-Fermi-levels. Random telegraph signals due to the capture of channel electrons and holes is characterized in a small area device to support our model. |
URI: | http://dx.doi.org/10.1109/TED.2005.854264 http://hdl.handle.net/11536/13303 |
ISSN: | 0018-9383 |
DOI: | 10.1109/TED.2005.854264 |
期刊: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
Volume: | 52 |
Issue: | 9 |
起始頁: | 2061 |
結束頁: | 2066 |
顯示於類別: | 期刊論文 |