標題: | Drain/gate-voltage-dependent on-current and off-current instabilities in polycrystalline silicon thin-film transistors under electrical stress |
作者: | Wang, SD Chang, TY Lo, WH Sang, JY Lei, TF 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | on-current (I(on));off-current (I(off));instability;poly-Si TFT;electrical stress |
公開日期: | 1-九月-2005 |
摘要: | The On-current (I(on)) and Off-current (I(off)) instabilities of polycrystalline silicon thin-film transistors (poly-Si TFTs) were investigated under various stress conditions. The stress-induced device degradation was studied by measuring the dependences Of I(on) and I(off) on the drain/gate voltages. From the results, dissimilar variations in I(on) and I(off) were observed. The differences can be attributed to the variances in the amount of trap charges in the gate oxide and the spatial distributions of the trap states generated in the poly-Si channel. A comprehensive model for the degradation Of I(on) and I(off) in poly-Si TFTs under various electrical stress conditions was suggested. |
URI: | http://dx.doi.org/10.1143/JJAP.44.6435 http://hdl.handle.net/11536/13309 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.44.6435 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS |
Volume: | 44 |
Issue: | 9A |
起始頁: | 6435 |
結束頁: | 6440 |
顯示於類別: | 期刊論文 |