標題: | Mechanism of on-current and off-current instabilities under electrical stress in polycrystalline silicon thin-film transistors |
作者: | De Wang, S Chang, TY Lo, WH Lei, TF 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | on-current (I(on));off-current (I(off));instabilities;poly-Si TFTs;electrical stress |
公開日期: | 2005 |
摘要: | The On-current (I(on)) and Off-current (I(off)) instabilities of polycrystalline silicon thin-film transistors (poly-Si TFTs) were investigated under various electrical stress conditions. The stress-induced device degradation was studied by measuring the dependences of I(on) and I(off) on the drain/gate voltages. Using this technique, dissimilar variations of I(on) and I(off) after stress were observed. The differences can be attributed to the variances in the amount of charges trapped in the gate oxide and the spatial distributions of the trap states generated in the poly-Si channel. These results suggested a comprehensive model for the I(on) and I(off) instabilities of poly-Si TFTs. |
URI: | http://hdl.handle.net/11536/17752 |
ISBN: | 0-7803-8803-8 |
期刊: | 2005 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 43RD ANNUAL |
起始頁: | 702 |
結束頁: | 703 |
顯示於類別: | 會議論文 |