標題: Mechanism of on-current and off-current instabilities under electrical stress in polycrystalline silicon thin-film transistors
作者: De Wang, S
Chang, TY
Lo, WH
Lei, TF
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: on-current (I(on));off-current (I(off));instabilities;poly-Si TFTs;electrical stress
公開日期: 2005
摘要: The On-current (I(on)) and Off-current (I(off)) instabilities of polycrystalline silicon thin-film transistors (poly-Si TFTs) were investigated under various electrical stress conditions. The stress-induced device degradation was studied by measuring the dependences of I(on) and I(off) on the drain/gate voltages. Using this technique, dissimilar variations of I(on) and I(off) after stress were observed. The differences can be attributed to the variances in the amount of charges trapped in the gate oxide and the spatial distributions of the trap states generated in the poly-Si channel. These results suggested a comprehensive model for the I(on) and I(off) instabilities of poly-Si TFTs.
URI: http://hdl.handle.net/11536/17752
ISBN: 0-7803-8803-8
期刊: 2005 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 43RD ANNUAL
起始頁: 702
結束頁: 703
Appears in Collections:Conferences Paper