標題: A Metal-Insulator Transition of the Buried MnO2 Monolayer in Complex Oxide Heterostructure
作者: Liu, Heng-Jui
Lin, Jheng-Cyuan
Fang, Yue-Wen
Wang, Jing-Ching
Huang, Bo-Chao
Gao, Xiang
Huang, Rong
Dean, Philip R.
Hatton, Peter D.
Chin, Yi-Ying
Lin, Hong-Ji
Chen, Chien-Te
Ikuhara, Yuichi
Chiu, Ya-Ping
Chang, Chia-Seng
Duan, Chun-Gang
He, Qing
Chu, Ying-Hao
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 2-十一月-2016
摘要: A novel artificially created MnO2 monolayer system is demonstrated in atomically controlled epitaxial perovskite heterostructures. With careful design of different electrostatic boundary conditions, a magnetic transition as well as a metal-insulator transition of the MnO2 monolayer is unveiled, providing a fundamental understanding of dimensionality-confined strongly correlated electron systems and a direction to design new electronic devices.
URI: http://dx.doi.org/10.1002/adma.201602281
http://hdl.handle.net/11536/133097
ISSN: 0935-9648
DOI: 10.1002/adma.201602281
期刊: ADVANCED MATERIALS
Volume: 28
Issue: 41
起始頁: 9142
結束頁: +
顯示於類別:期刊論文