標題: | A Metal-Insulator Transition of the Buried MnO2 Monolayer in Complex Oxide Heterostructure |
作者: | Liu, Heng-Jui Lin, Jheng-Cyuan Fang, Yue-Wen Wang, Jing-Ching Huang, Bo-Chao Gao, Xiang Huang, Rong Dean, Philip R. Hatton, Peter D. Chin, Yi-Ying Lin, Hong-Ji Chen, Chien-Te Ikuhara, Yuichi Chiu, Ya-Ping Chang, Chia-Seng Duan, Chun-Gang He, Qing Chu, Ying-Hao 材料科學與工程學系 Department of Materials Science and Engineering |
公開日期: | 2-十一月-2016 |
摘要: | A novel artificially created MnO2 monolayer system is demonstrated in atomically controlled epitaxial perovskite heterostructures. With careful design of different electrostatic boundary conditions, a magnetic transition as well as a metal-insulator transition of the MnO2 monolayer is unveiled, providing a fundamental understanding of dimensionality-confined strongly correlated electron systems and a direction to design new electronic devices. |
URI: | http://dx.doi.org/10.1002/adma.201602281 http://hdl.handle.net/11536/133097 |
ISSN: | 0935-9648 |
DOI: | 10.1002/adma.201602281 |
期刊: | ADVANCED MATERIALS |
Volume: | 28 |
Issue: | 41 |
起始頁: | 9142 |
結束頁: | + |
顯示於類別: | 期刊論文 |