Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cheng, Chuan-An | en_US |
dc.contributor.author | Tsai, Tsung-Yen | en_US |
dc.contributor.author | Huang, Yu-Hsiang | en_US |
dc.contributor.author | Lin, Chien-Hung | en_US |
dc.contributor.author | Lee, Chia-Lin | en_US |
dc.contributor.author | Yang, Shan-Chun | en_US |
dc.contributor.author | Chen, Kuan-Neng | en_US |
dc.date.accessioned | 2017-04-21T06:56:32Z | - |
dc.date.available | 2017-04-21T06:56:32Z | - |
dc.date.issued | 2017-03 | en_US |
dc.identifier.issn | 2156-3950 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/TCPMT.2016.2642208 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/133143 | - |
dc.description.abstract | A new temporary bonding technology with an ultrafast laser-release process of less than 20 s is presented, where a 300-nm-thick photolysis polymer and polyimide are served as the release layer and adhesive layer, respectively. The submicrometer-thick polymer has the feature of high absorption of a 355-nm laser in contrast to polyimide during debonding procedures. In addition, the thin release layers of high chemical resistance and mechanical strength demonstrate their feasibility for handling process. Electrical characteristics of the devices before and after the laser-release process are investigated, showing no degradation. Thus, this technology scheme demonstrates its potential for temporary bonding and release in 3-D integration applications. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | 3-D integration | en_US |
dc.subject | laser ablation | en_US |
dc.subject | temporary bonding | en_US |
dc.title | Characterization of Temporary Bonding and Laser Release Using Polyimide and a 300-nm Photolysis Polymer System for High-Throughput 3-D IC Applications | en_US |
dc.identifier.doi | 10.1109/TCPMT.2016.2642208 | en_US |
dc.identifier.journal | IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY | en_US |
dc.citation.volume | 7 | en_US |
dc.citation.issue | 3 | en_US |
dc.citation.spage | 456 | en_US |
dc.citation.epage | 462 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000396396200018 | en_US |
Appears in Collections: | Articles |