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dc.contributor.authorWang, L. Y.en_US
dc.contributor.authorChu, C. S.en_US
dc.date.accessioned2019-04-03T06:36:46Z-
dc.date.available2019-04-03T06:36:46Z-
dc.date.issued2017-02-07en_US
dc.identifier.issn2469-9950en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.95.075406en_US
dc.identifier.urihttp://hdl.handle.net/11536/133167-
dc.description.abstractIn this paper, we show that a single finger-gate capacitor (FGC) can generate pure spin pumping in a quantum channel (QC). Two dynamic fields, ac spin-orbit interaction and ac potential energy, both induced by the FGC onto the QC, are the agents driving the spin pumping. Smooth spatial profiles of the two ac fields are taken into account both perturbatively and full numerically for the nonadiabatic spin pumping. Our perturbative approach reveals that the spin-pumping mechanism is resonant sideband processes associated with simultaneous coupling of the two ac fields with traversing carriers. Full sideband-process treatment is carried out numerically by a time-dependent scattering matrix method. The same spin-pumping mechanism holds also for the case of a single finger-gated QC, albeit with smaller pumping amplitudes.en_US
dc.language.isoen_USen_US
dc.titleAll-electric spin pumping in quantum channels with a single finger-gate capacitoren_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevB.95.075406en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.citation.volume95en_US
dc.citation.issue7en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000393500400005en_US
dc.citation.woscount0en_US
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