Photoluminescence of colloidal CdSe/ZnS quantum dots under oxygen atmosphere

Abstract

The effects of oxygen versus vacuum ambients on colloidal CdSe/ZnS quantum dots (QDs) were studied using both continuous and time-resolved photoluminescence (PL) measurements. The PL intensities were found to be an order of magnitude higher in an oxygen atmosphere, which is explained by the passivation of surface defects by oxygen absorption. The decay of PL intensities can be best fitted by a biexponential function with lifetimes of approximately 1 ns; for the fast decay and approximately 10 ns; for the slow decay. Based on the emission-energy dependence of carrier lifetimes and of the amplitude ratio of the fast-decay component to the slow-decay component, we suggest that the fast and slow PL decay of colloidal CdSe/ZnS QDs is caused by the recombination of delocalized carriers in the internal core states and the localized carriers in the surface states, respectively.