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dc.contributor.authorLai, Bo-Cheng Charlesen_US
dc.contributor.authorLin, Jiun-Liangen_US
dc.date.accessioned2017-04-21T06:56:21Z-
dc.date.available2017-04-21T06:56:21Z-
dc.date.issued2017-01en_US
dc.identifier.issn1063-8210en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TVLSI.2016.2568579en_US
dc.identifier.urihttp://hdl.handle.net/11536/133220-
dc.description.abstractThe utilization of block RAMs (BRAMs) is a critical performance factor for multiported memory designs on field-programmable gate arrays (FPGAs). Not only does the excessive demand on BRAMs block the usage of BRAMs from other parts of a design, but the complex routing between BRAMs and logic also limits the operating frequency. This paper first introduces a brand new perspective and a more efficient way of using a conventional two reads one write (2R1W) memory as a 2R1W/4R memory. By exploiting the 2R1W/4R as the building block, this paper introduces a hierarchical design of 4R1W memory that requires 25% fewer BRAMs than the previous approach of duplicating the 2R1W module. Memories with more read/write ports can be extended from the proposed 2R1W/4R memory and the hierarchical 4R1W memory. Compared with previous xor-based and live value table-based approaches, the proposed designs can, respectively, reduce up to 53% and 69% of BRAM usage for 4R2W memory designs with 8K-depth. For complex multiported designs, the proposed BRAM-efficient approaches can achieve higher clock frequencies by alleviating the complex routing in an FPGA. For 4R3W memory with 8K-depth, the proposed design can save 53% of BRAMs and enhance the operating frequency by 20%.en_US
dc.language.isoen_USen_US
dc.subjectBlock RAM (BRAM)en_US
dc.subjectfield-programmable gate array (FPGA)en_US
dc.subjectmultiported memoryen_US
dc.subjectperformanceen_US
dc.titleEfficient Designs of Multiported Memory on FPGAen_US
dc.identifier.doi10.1109/TVLSI.2016.2568579en_US
dc.identifier.journalIEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMSen_US
dc.citation.volume25en_US
dc.citation.issue1en_US
dc.citation.spage139en_US
dc.citation.epage150en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000394591600011en_US
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