標題: Electric Field Induced Nitride Trapped Charge Lateral Migration in a SONOS Flash Memory
作者: Liu, Yu-Heng
Jiang, Cheng-Min
Chen, Wei-Chun
Wang, Tahui
Tsai, Wen-Jer
Lu, Tao-Cheng
Chen, Kuang-Chao
Lu, Chih-Yuan
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Electron lateral migration;SONOS;thermally assisted tunneling
公開日期: 一月-2017
摘要: We investigated electric field-induced trapped electron lateralmigration in a SONOS flash cell. The threshold voltage shift (Delta V-t) andgate-induceddrain leakage(GIDL) current were measured to monitor nitride electron movement in retention. We applied different voltages to the gate and the source/drain in retention to vary the vertical and lateral electric fields. Our study shows that: 1) GIDL current can be used tomonitor trapped charge lateralmigration and 2) nitride charge lateral migration exhibits strong dependence on the lateral electric field. Based on measured temperature and field dependence, a nitride trapped charge emission process via thermally assisted tunneling is proposed for electron lateral migration. The emission rates of thermally assisted tunneling, direct trap-to-band tunneling and Frenkel-Poole emission were compared.
URI: http://dx.doi.org/10.1109/LED.2016.2633545
http://hdl.handle.net/11536/133239
ISSN: 0741-3106
DOI: 10.1109/LED.2016.2633545
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 38
Issue: 1
起始頁: 48
結束頁: 51
顯示於類別:期刊論文