1. 目前位置：

完整後設資料紀錄
DC 欄位值語言
dc.contributor.authorLin, HCen_US
dc.contributor.authorLee, MHen_US
dc.contributor.authorSu, CJen_US
dc.contributor.authorHuang, TYen_US
dc.contributor.authorLee, CCen_US
dc.contributor.authorYang, YSen_US
dc.date.accessioned2014-12-08T15:18:31Z-
dc.date.available2014-12-08T15:18:31Z-
dc.date.issued2005-09-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2005.853669en_US
dc.identifier.urihttp://hdl.handle.net/11536/13323-
dc.description.abstractA very simple and low-cost scheme is proposed for fabricating thin-film transistors with poly-Si nanowire (NW) channels. In this scheme, the poly-Si NW channel is formed by cleverly employing the poly-Si sidewall spacer technique. In addition, the poly-Si NW channel is genuinely exposed to the environment after the poly-Si sidewall spacer formation in the new scheme. This unique feature, together with its simplicity and low-cost, makes this approach very suitable for applications and manufacturing of bio-logic sensing devices. Good device performance is demonstrated in this letter.en_US
dc.language.isoen_USen_US
dc.subjectnanowiresen_US
dc.subjectpoly-Sien_US
dc.subjectsensor deviceen_US
dc.subjectthin-film transistors (TFTs)en_US
dc.titleA simple and low-cost method to fabricate TFTs with poly-Si nanowire channelen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2005.853669en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume26en_US
dc.citation.issue9en_US
dc.citation.spage643en_US
dc.citation.epage645en_US
dc.contributor.department生物科技學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Biological Science and Technologyen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000231577900015-
dc.citation.woscount44-
顯示於類別：期刊論文


文件中的檔案：

  1. 000231577900015.pdf

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。

相關內容
Loading...