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dc.contributor.authorMei, Yangen_US
dc.contributor.authorWeng, Guo-Enen_US
dc.contributor.authorZhang, Bao-Pingen_US
dc.contributor.authorLiu, Jian-Pingen_US
dc.contributor.authorHofmann, Werneren_US
dc.contributor.authorYing, Lei-Yingen_US
dc.contributor.authorZhang, Jiang-Yongen_US
dc.contributor.authorLi, Zeng-Chengen_US
dc.contributor.authorYang, Huien_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.date.accessioned2019-04-03T06:36:29Z-
dc.date.available2019-04-03T06:36:29Z-
dc.date.issued2017-01-01en_US
dc.identifier.issn2047-7538en_US
dc.identifier.urihttp://dx.doi.org/10.1038/lsa.2016.199en_US
dc.identifier.urihttp://hdl.handle.net/11536/133303-
dc.description.abstractSemiconductor vertical-cavity surface-emitting lasers (VCSELs) with wavelengths from 491.8 to 565.7 nm, covering most of the 'green gap', are demonstrated. For these lasers, the same quantum dot (QD) active region was used, whereas the wavelength was controlled by adjusting the cavity length, which is difficult for edge-emitting lasers. Compared with reports in the literature for green VCSELs, our lasers have set a few world records for the lowest threshold, longest wavelength and continuous-wave (CW) lasing at room temperature. The nanoscale QDs contribute dominantly to the low threshold. The emitting wavelength depends on the electron-photon interaction or the coupling between the active layer and the optical field, which is modulated by the cavity length. The green VCSELs exhibit a low-thermal resistance of 915 kW(-1), which benefits the CW lasing. Such VCSELs are important for small-size, low power consumption full-color displays and projectors.en_US
dc.language.isoen_USen_US
dc.subjectGaNen_US
dc.subjectInGaNen_US
dc.subjectquantum doten_US
dc.subjectvertical-cavity surface-emitting laseren_US
dc.subjectwide-gap semiconductoren_US
dc.titleQuantum dot vertical-cavity surface-emitting lasers covering the 'green gap'en_US
dc.typeArticleen_US
dc.identifier.doi10.1038/lsa.2016.199en_US
dc.identifier.journalLIGHT-SCIENCE & APPLICATIONSen_US
dc.citation.volume6en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department光電工程研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of EO Enginerringen_US
dc.identifier.wosnumberWOS:000395833100004en_US
dc.citation.woscount20en_US
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