完整後設資料紀錄
DC 欄位語言
dc.contributor.authorLiu, Yu-Hengen_US
dc.contributor.authorJiang, Cheng-Minen_US
dc.contributor.authorChen, Wei-Chunen_US
dc.contributor.authorWang, Tahuien_US
dc.contributor.authorTsai, Wen-Jeren_US
dc.contributor.authorLu, Tao-Chengen_US
dc.contributor.authorChen, Kuang-Chaoen_US
dc.contributor.authorLu, Chih-Yuanen_US
dc.date.accessioned2017-04-21T06:56:17Z-
dc.date.available2017-04-21T06:56:17Z-
dc.date.issued2017-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2016.2633545en_US
dc.identifier.urihttp://hdl.handle.net/11536/133311-
dc.description.abstractWe investigated electric field-induced trapped electron lateralmigration in a SONOS flash cell. The threshold voltage shift (Delta V-t) andgate-induceddrain leakage(GIDL) current were measured to monitor nitride electron movement in retention. We applied different voltages to the gate and the source/drain in retention to vary the vertical and lateral electric fields. Our study shows that: 1) GIDL current can be used tomonitor trapped charge lateralmigration and 2) nitride charge lateral migration exhibits strong dependence on the lateral electric field. Based on measured temperature and field dependence, a nitride trapped charge emission process via thermally assisted tunneling is proposed for electron lateral migration. The emission rates of thermally assisted tunneling, direct trap-to-band tunneling and Frenkel-Poole emission were compared.en_US
dc.language.isoen_USen_US
dc.subjectElectron lateral migrationen_US
dc.subjectSONOSen_US
dc.subjectthermally assisted tunnelingen_US
dc.titleElectric Field Induced Nitride Trapped Charge Lateral Migration in a SONOS Flash Memoryen_US
dc.identifier.doi10.1109/LED.2016.2633545en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume38en_US
dc.citation.issue1en_US
dc.citation.spage48en_US
dc.citation.epage51en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000393765800012en_US
顯示於類別:期刊論文