AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications (vol 37, pg 1395, 2016)

doi:10.1109/LED.2016.2634606

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lin, Yen-Ku	en_US
dc.contributor.author	Noda, Shuichi	en_US
dc.contributor.author	Lo, Hsiao-Chieh	en_US
dc.contributor.author	Liu, Shih-Chien	en_US
dc.contributor.author	Wu, Chia-Hsun	en_US
dc.contributor.author	Wong, Yuen-Yee	en_US
dc.contributor.author	Luc, Quang Ho	en_US
dc.contributor.author	Chang, Po-Chun	en_US
dc.contributor.author	Hsu, Heng-Tung	en_US
dc.contributor.author	Samukawa, Seiji	en_US
dc.contributor.author	Chang, Edward Yi	en_US
dc.date.accessioned	2017-04-21T06:56:17Z	-
dc.date.available	2017-04-21T06:56:17Z	-
dc.date.issued	2017-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LED.2016.2634606	en_US
dc.identifier.uri	http://hdl.handle.net/11536/133312	-
dc.language.iso	en_US	en_US
dc.title	AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications (vol 37, pg 1395, 2016)	en_US
dc.identifier.doi	10.1109/LED.2016.2634606	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	38	en_US
dc.citation.issue	1	en_US
dc.citation.spage	149	en_US
dc.citation.epage	149	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	光電系統研究所	zh_TW
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	國際半導體學院	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.contributor.department	Institute of Photonic System	en_US
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.contributor.department	International College of Semiconductor Technology	en_US
dc.identifier.wosnumber	WOS:000393765800038	en_US
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