標題: Broadband antireflection sub-wavelength structure of InGaP/InGaAs/Ge triple junction solar cell with composition-graded SiNx
作者: Chung, Chen-Chen
Lo, Hsiao-Chieh
Lin, Yen-Ku
Yu, Hung-Wei
Binh Tinh Tran
Lin, Kung-Liang
Chen, Yung Chang
Nguyen-Hong Quan
Chang, Edward Yi
Tseng, Yuan-Chieh
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
關鍵字: solar cell;sub wavelength structure;antireflection
公開日期: 五月-2015
摘要: This work reports a fabrication strategy to improve the antireflective ability of a InGaP/GaAs/Ge triple-junction solar cell, by combining a nano-templating technique and a chemical-synthesis approach. SiH4 and N-2 were used as ammonia-free reaction gases in a plasma-enhanced chemical vapor deposition (PECVD) to prepare Si3N4 as an original antireflective coating (ARC) layer with better chemical stability. Composition-graded SiNx was successfully integrated with sub-wavelength structure by modulating SiH4/N-2 ratio during PECVD deposition, and followed by a controllable gold-nanoparticle masking technique on top of the solar cell. Finite-difference time-domain solution was employed to simulate and optimize the aspect-ratio of the ARC, under the condition of variable refractive index over a broad wavelength window, and followed by the masking technique to obtain the desired ARC dimension. This enabled a low light reflectance (<10%) over a broad spectral bandwidth (300-1800 nm) for the solar cell with excellent stability, because of the triple advantages of structural optimization, better chemical stability and graded refractive index of the ARC. The solar cell\'s performance was tested and showed great competitiveness to those of forefront studies, suggesting the feasibility of the proposed technology.
URI: http://dx.doi.org/10.1088/2053-1591/2/5/055505
http://hdl.handle.net/11536/133378
ISSN: 2053-1591
DOI: 10.1088/2053-1591/2/5/055505
期刊: MATERIALS RESEARCH EXPRESS
Volume: 2
Issue: 5
顯示於類別:期刊論文