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dc.contributor.authorTuyen, Le Thi Camen_US
dc.contributor.authorPhuoc Huu Leen_US
dc.contributor.authorLuo, Chih Weien_US
dc.contributor.authorLeu, Jihperngen_US
dc.date.accessioned2017-04-21T06:55:46Z-
dc.date.available2017-04-21T06:55:46Z-
dc.date.issued2016-07-15en_US
dc.identifier.issn0925-8388en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jallcom.2016.03.006en_US
dc.identifier.urihttp://hdl.handle.net/11536/133397-
dc.description.abstractThis study reports the material and thermoelectric properties of n-type nanocrystalline Bi-Se-Te thin films grown using pulse laser deposition (PLD) with a Bi2Se2Te single crystal as the target. In order to optimize the transport and thermoelectric properties, Bi-Se-Te thin films are fabricated by maintaining the substrate temperature (T-S) between 200 and 350 degrees C and a helium gas pressure (P-He) from 0.027 to 86.7 Pa. Unlike the target, all deposited films unexpectedly exhibit Bi2Se2Te phase with highly c-axis orientation, because of the high re-evaporation rates of Se and Te at the elevated T-S >= 200 degrees C. The estimated grain (crystalline) size ranges between 18.4 and 39.4 nm, and this monotonically increases as TS increases. The Bi3Se2Te films demonstrate excellent electrical conductivities owning to the high carrier concentration in the order of 10(20) cm(-3). A window of deposition conditions for high thermoelectric power factors (PF) is T-S of 250-350 degrees C and P-He of 40 Pa. The optimal PF is 8.3 mu W/cmK(2) for the Bi3Se2Te film prepared at 250 degrees C and 40 Pa. (C) 2016 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectBi3Se2Teen_US
dc.subjectThermoelectricen_US
dc.subjectNanocrystalline filmsen_US
dc.subjectPower factoren_US
dc.subjectPulse laser depositionen_US
dc.titleThermoelectric properties of nanocrystalline Bi3Se2Te thin films grown using pulsed laser depositionen_US
dc.identifier.doi10.1016/j.jallcom.2016.03.006en_US
dc.identifier.journalJOURNAL OF ALLOYS AND COMPOUNDSen_US
dc.citation.volume673en_US
dc.citation.spage107en_US
dc.citation.epage114en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000373466400015en_US
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