Enhanced light output of an InGaN/GaN light emitting diode with a nano-roughened p-GaN surface

doi:10.1088/0957-4484/16/9/071

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Huang, HW	en_US
dc.contributor.author	Chu, JT	en_US
dc.contributor.author	Kao, CC	en_US
dc.contributor.author	Hseuh, TH	en_US
dc.contributor.author	Lu, TC	en_US
dc.contributor.author	Kuo, HC	en_US
dc.contributor.author	Wang, SC	en_US
dc.contributor.author	Yu, CC	en_US
dc.date.accessioned	2014-12-08T15:18:32Z	-
dc.date.available	2014-12-08T15:18:32Z	-
dc.date.issued	2005-09-01	en_US
dc.identifier.issn	0957-4484	en_US
dc.identifier.uri	http://dx.doi.org/10.1088/0957-4484/16/9/071	en_US
dc.identifier.uri	http://hdl.handle.net/11536/13342	-
dc.description.abstract	This investigation describes the development of an InGaN/GaN light emitting diode (LED) with a nano-roughened top p-GaN surface using an Ni nano-mask and laser etching. The light output of the InGaN/GaN LED with a nano-roughened top p-GaN surface is 1.55 times that of a conventional LED, and the wall-plug efficiency is 68% higher at 20 mA. The series resistance of the InGaN/GaN LED was reduced by 32% by the increase in the contact area of the nano-roughened surface.	en_US
dc.language.iso	en_US	en_US
dc.title	Enhanced light output of an InGaN/GaN light emitting diode with a nano-roughened p-GaN surface	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1088/0957-4484/16/9/071	en_US
dc.identifier.journal	NANOTECHNOLOGY	en_US
dc.citation.volume	16	en_US
dc.citation.issue	9	en_US
dc.citation.spage	1844	en_US
dc.citation.epage	1848	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000232089500071	-
dc.citation.woscount	66	-
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