The Current Behaviors of the Amorphous In-Ga-Zn-O Thin-Film Transistor Under Varying Illumination Conditions

Abstract

In this study, the time response behavior of the amorphous indium-gallium zinc-oxide (a-IGZO) thin-film transistors (TFTs) to the illumination pulse is analyzed. We modified the previously proposed fitting formula by changing the fitting parameters from constant to time dependent. The mechanism for the response behaviors is proposed based on the analysis of the fitting parameters with respect to measurement time and under different light intensities. The single-pulse measurement results and their corresponding fitting parameters is used as the database to predict the current behaviors of the TFTs under multi-pulse illumination. The predicted and measured results fit fairly well. The method to formulize the time response for the a-IGZO TFT under varying situations of illumination is thus developed, which can be important in the design and simulation of transparent electronic circuits.