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dc.contributor.authorChen, Ming-Yaoen_US
dc.contributor.authorLiang, Y. C.en_US
dc.contributor.authorChen, Chihen_US
dc.date.accessioned2017-04-21T06:56:47Z-
dc.date.available2017-04-21T06:56:47Z-
dc.date.issued2016-04en_US
dc.identifier.issn0957-4522en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s10854-015-4213-7en_US
dc.identifier.urihttp://hdl.handle.net/11536/133457-
dc.description.abstractThis paper investigates the current-enhanced surface diffusion of solder along the side walls of Cu pillars. Two solder joints, Cu pillar/10-A mu m-solder/Ni and Cu pillar/Ni/10-A mu m-solder/Ni, were subjected to a 1.2 x 10(4) /cm(2) current density at 125 A degrees C for various amounts of time. The Sn atoms may diffuse to the Cu pillars side walls and form Cu6Sn5 intermetallic compounds (IMCs). Because the Sn atoms are drawn from the solder joints, serious voids are formed in these joints. Side diffusion is more serious for the Cu pillar/Ni/10-A mu m-solder/Ni joints than the Cu pillar/10-A mu m-solder/Ni joints because, instead of forming Ni3Sn4 IMCs, the Sn atoms prefer diffusing into the Cu side walls to form Cu6Sn5 IMCs. This Sn side diffusion accelerates the depletion of solder in the joints and thus may be a serious reliability issue for solder joints with a reduced solder height.en_US
dc.language.isoen_USen_US
dc.titleElectromigration in reduced-height solder joints with Cu pillarsen_US
dc.identifier.doi10.1007/s10854-015-4213-7en_US
dc.identifier.journalJOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICSen_US
dc.citation.volume27en_US
dc.citation.issue4en_US
dc.citation.spage3715en_US
dc.citation.epage3722en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000372166600076en_US
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