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dc.contributor.authorSung, C. L.en_US
dc.contributor.authorLee, C. Y.en_US
dc.contributor.authorCho, H. H.en_US
dc.contributor.authorHuang, Y. J.en_US
dc.contributor.authorChen, Y. F.en_US
dc.contributor.authorPan, Z. B.en_US
dc.contributor.authorYu, H. H.en_US
dc.contributor.authorZhang, H. J.en_US
dc.contributor.authorWang, J. Y.en_US
dc.date.accessioned2019-04-03T06:44:08Z-
dc.date.available2019-04-03T06:44:08Z-
dc.date.issued2016-02-22en_US
dc.identifier.issn1094-4087en_US
dc.identifier.urihttp://dx.doi.org/10.1364/OE.24.003832en_US
dc.identifier.urihttp://hdl.handle.net/11536/133523-
dc.description.abstractA harmonically self-mode-locked Nd:Sr3Y2(BO3)(4) disordered crystal laser with subpicosecond pulse duration is demonstrated. We exploit the damped harmonic oscillator model to numerically verify that the mode spacing of the laser cavity can be modified to be the harmonics of the free spectral range of the Fabry-Perot cavity when the optical length of the laser cavity is close to a commensurate ratio of the optical length of the FabryPerot cavity. In experiment, the Fabry-Perot cavity can be formed by the pump facet of the disordered crystal and the front mirror. A 110 GHz single-pulse harmonically mode-locked pulse train with pulse duration of 857 fs is experimentally achieved under optical lengths of 27.19 and 4.08 mm for the laser cavity and Fabry-Perot cavity respectively, corresponding to a fractional number of 20/3. A maximum output power of 162 mW is obtained at an incident pump power of 3.1 W. (C)2016 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleTheoretical and experimental studies for high-repetition-rate disordered crystal lasers with harmonic self-mode lockingen_US
dc.typeArticleen_US
dc.identifier.doi10.1364/OE.24.003832en_US
dc.identifier.journalOPTICS EXPRESSen_US
dc.citation.volume24en_US
dc.citation.issue4en_US
dc.citation.spage3832en_US
dc.citation.epage3838en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000371433700060en_US
dc.citation.woscount2en_US
Appears in Collections:Articles


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