完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Sung, C. L. | en_US |
dc.contributor.author | Lee, C. Y. | en_US |
dc.contributor.author | Cho, H. H. | en_US |
dc.contributor.author | Huang, Y. J. | en_US |
dc.contributor.author | Chen, Y. F. | en_US |
dc.contributor.author | Pan, Z. B. | en_US |
dc.contributor.author | Yu, H. H. | en_US |
dc.contributor.author | Zhang, H. J. | en_US |
dc.contributor.author | Wang, J. Y. | en_US |
dc.date.accessioned | 2019-04-03T06:44:08Z | - |
dc.date.available | 2019-04-03T06:44:08Z | - |
dc.date.issued | 2016-02-22 | en_US |
dc.identifier.issn | 1094-4087 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1364/OE.24.003832 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/133523 | - |
dc.description.abstract | A harmonically self-mode-locked Nd:Sr3Y2(BO3)(4) disordered crystal laser with subpicosecond pulse duration is demonstrated. We exploit the damped harmonic oscillator model to numerically verify that the mode spacing of the laser cavity can be modified to be the harmonics of the free spectral range of the Fabry-Perot cavity when the optical length of the laser cavity is close to a commensurate ratio of the optical length of the FabryPerot cavity. In experiment, the Fabry-Perot cavity can be formed by the pump facet of the disordered crystal and the front mirror. A 110 GHz single-pulse harmonically mode-locked pulse train with pulse duration of 857 fs is experimentally achieved under optical lengths of 27.19 and 4.08 mm for the laser cavity and Fabry-Perot cavity respectively, corresponding to a fractional number of 20/3. A maximum output power of 162 mW is obtained at an incident pump power of 3.1 W. (C)2016 Optical Society of America | en_US |
dc.language.iso | en_US | en_US |
dc.title | Theoretical and experimental studies for high-repetition-rate disordered crystal lasers with harmonic self-mode locking | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1364/OE.24.003832 | en_US |
dc.identifier.journal | OPTICS EXPRESS | en_US |
dc.citation.volume | 24 | en_US |
dc.citation.issue | 4 | en_US |
dc.citation.spage | 3832 | en_US |
dc.citation.epage | 3838 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000371433700060 | en_US |
dc.citation.woscount | 2 | en_US |
顯示於類別: | 期刊論文 |