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dc.contributor.authorChan, Chien-Yien_US
dc.contributor.authorWang, Yingyingen_US
dc.contributor.authorWu, Guan-Weien_US
dc.contributor.authorDiau, Eric Wei-Guangen_US
dc.date.accessioned2017-04-21T06:56:28Z-
dc.date.available2017-04-21T06:56:28Z-
dc.date.issued2016en_US
dc.identifier.issn2050-7488en_US
dc.identifier.urihttp://dx.doi.org/10.1039/c6ta00912cen_US
dc.identifier.urihttp://hdl.handle.net/11536/133575-
dc.description.abstractWe developed a simple drop-casting method via solvent extraction (SECG) to grow dense and uniform perovskite nanocrystals at room temperature for carbon-based mesoscopic solar cells free of an organic hole-transport layer. The CH3NH3PbI3/N-methyl-2-pyrrolidone (NMP) precursor solution (40%) was first dripped onto a substrate with film configuration TiO2/Al2O3/C and infiltrated at 70 degrees C for 10 min. The perovskite substrate was next immersed in a bath of diethyl ether at 25 degrees C for 30 min. Third, the solventextracted substrate was stored in a dry box (humidity 50%) at 25 degrees C for at least 100 h to complete the crystal growth. The device performance attained a power conversion efficiency (PCE) of 12.3%, which is significantly greater than that of DMF (6.3%) and NMP (8.3%) devices using traditional thermal annealing. The SECG device displayed a superior intrinsic enduring stability: the PCE exceeded 12% for 5000 h with a maximum value of 13.3% without light-soaking at 25 degrees C, but the performance degraded rapidly under one-sun irradiation without encapsulation. To understand the kinetics of charge transfer and defect relaxation for the devices under investigation, we recorded transient photoluminescence decays at an excitation wavelength of 635 nm and a probe wavelength of 770 nm.en_US
dc.language.isoen_USen_US
dc.titleSolvent-extraction crystal growth for highly efficient carbon-based mesoscopic perovskite solar cells free of hole conductorsen_US
dc.identifier.doi10.1039/c6ta00912cen_US
dc.identifier.journalJOURNAL OF MATERIALS CHEMISTRY Aen_US
dc.citation.volume4en_US
dc.citation.issue10en_US
dc.citation.spage3872en_US
dc.citation.epage3878en_US
dc.contributor.department應用化學系zh_TW
dc.contributor.department應用化學系分子科學碩博班zh_TW
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.contributor.departmentInstitute of Molecular scienceen_US
dc.identifier.wosnumberWOS:000371967000035en_US
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