完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Liu, M. C. | en_US |
dc.contributor.author | Cheng, Y. -J. | en_US |
dc.contributor.author | Hsu, S. -H. | en_US |
dc.contributor.author | Kuo, H. C. | en_US |
dc.contributor.author | Lu, T. C. | en_US |
dc.contributor.author | Wang, S. C. | en_US |
dc.date.accessioned | 2014-12-08T15:18:33Z | - |
dc.date.available | 2014-12-08T15:18:33Z | - |
dc.date.issued | 2009 | en_US |
dc.identifier.isbn | 978-1-60511-155-1 | en_US |
dc.identifier.issn | 0272-9172 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/13357 | - |
dc.description.abstract | We report the experimental observation of a very strong cavity polariton dispersion in a multi-axial mode GaN microcavity. The linewidth of photoluminescent (PL) spectrum covers a few cavity axial modes. The resonant photoluminescent peaks have a strong dispersion. The frequency spacing between adjacent peaks decreases by almost a factor of five from 470nm to 370nm. The strong dispersion can be well described by cavity polariton dispersion, but not by the dispersion of the refractive index of GaN. The measured exciton-photon interaction constant is 260 meV. It is an order of magnitude higher than the typically reported values for GaN microcavities | en_US |
dc.language.iso | en_US | en_US |
dc.title | Strong Exciton Polariton Dispersion in Multimode GaN Microcavity | en_US |
dc.type | Article | en_US |
dc.identifier.journal | MATERIALS FOR NANOPHOTONICS - PLASMONICS, METAMATERIALS AND LIGHT LOCALIZATION | en_US |
dc.citation.volume | 1182 | en_US |
dc.citation.spage | 49 | en_US |
dc.citation.epage | 53 | en_US |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000273972800006 | - |
顯示於類別: | 會議論文 |