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dc.contributor.authorLiu, M. C.en_US
dc.contributor.authorCheng, Y. -J.en_US
dc.contributor.authorHsu, S. -H.en_US
dc.contributor.authorKuo, H. C.en_US
dc.contributor.authorLu, T. C.en_US
dc.contributor.authorWang, S. C.en_US
dc.date.accessioned2014-12-08T15:18:33Z-
dc.date.available2014-12-08T15:18:33Z-
dc.date.issued2009en_US
dc.identifier.isbn978-1-60511-155-1en_US
dc.identifier.issn0272-9172en_US
dc.identifier.urihttp://hdl.handle.net/11536/13357-
dc.description.abstractWe report the experimental observation of a very strong cavity polariton dispersion in a multi-axial mode GaN microcavity. The linewidth of photoluminescent (PL) spectrum covers a few cavity axial modes. The resonant photoluminescent peaks have a strong dispersion. The frequency spacing between adjacent peaks decreases by almost a factor of five from 470nm to 370nm. The strong dispersion can be well described by cavity polariton dispersion, but not by the dispersion of the refractive index of GaN. The measured exciton-photon interaction constant is 260 meV. It is an order of magnitude higher than the typically reported values for GaN microcavitiesen_US
dc.language.isoen_USen_US
dc.titleStrong Exciton Polariton Dispersion in Multimode GaN Microcavityen_US
dc.typeArticleen_US
dc.identifier.journalMATERIALS FOR NANOPHOTONICS - PLASMONICS, METAMATERIALS AND LIGHT LOCALIZATIONen_US
dc.citation.volume1182en_US
dc.citation.spage49en_US
dc.citation.epage53en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000273972800006-
顯示於類別:會議論文