標題: Indium-rich InAlN films on GaN/sapphire by molecular beam epitaxy
作者: Wu, Yue-Han
Wong, Yuen-Yee
Chen, Wei-Chun
Tsai, Dung-Sheng
Peng, Chun-Yen
Tian, Jr-Sheng
Chang, Li
Chang, Edward Yi
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: InAlN;indium-rich;molecular beam epitaxy;bowing parameter
公開日期: 三月-2014
摘要: Here, we report the results of characterization of indium (In)-rich InAlN films on GaN/Sapphire (0001) substrates grown by molecular beam epitaxy. The highquality similar to 123 nm thick InAlN films with 85% In content without phase separation were assessed with x-ray diffraction and transmission electron microscopy (TEM) with x-ray energy dispersive spectroscopy. High-resolution TEM analysis reveals the relaxation at InAlN/GaN interface with misfit dislocations of 1.59 nm spacing. Finally, optical and electrical properties of the InAlN films are presented from absorption spectroscopy and Hall measurements.
URI: http://dx.doi.org/10.1088/2053-1591/1/1/015904
http://hdl.handle.net/11536/133588
ISSN: 2053-1591
DOI: 10.1088/2053-1591/1/1/015904
期刊: MATERIALS RESEARCH EXPRESS
Volume: 1
Issue: 1
顯示於類別:期刊論文