完整後設資料紀錄
DC 欄位語言
dc.contributor.authorWu, Yue-Hanen_US
dc.contributor.authorWong, Yuen-Yeeen_US
dc.contributor.authorChen, Wei-Chunen_US
dc.contributor.authorTsai, Dung-Shengen_US
dc.contributor.authorPeng, Chun-Yenen_US
dc.contributor.authorTian, Jr-Shengen_US
dc.contributor.authorChang, Lien_US
dc.contributor.authorChang, Edward Yien_US
dc.date.accessioned2017-04-21T06:56:26Z-
dc.date.available2017-04-21T06:56:26Z-
dc.date.issued2014-03en_US
dc.identifier.issn2053-1591en_US
dc.identifier.urihttp://dx.doi.org/10.1088/2053-1591/1/1/015904en_US
dc.identifier.urihttp://hdl.handle.net/11536/133588-
dc.description.abstractHere, we report the results of characterization of indium (In)-rich InAlN films on GaN/Sapphire (0001) substrates grown by molecular beam epitaxy. The highquality similar to 123 nm thick InAlN films with 85% In content without phase separation were assessed with x-ray diffraction and transmission electron microscopy (TEM) with x-ray energy dispersive spectroscopy. High-resolution TEM analysis reveals the relaxation at InAlN/GaN interface with misfit dislocations of 1.59 nm spacing. Finally, optical and electrical properties of the InAlN films are presented from absorption spectroscopy and Hall measurements.en_US
dc.language.isoen_USen_US
dc.subjectInAlNen_US
dc.subjectindium-richen_US
dc.subjectmolecular beam epitaxyen_US
dc.subjectbowing parameteren_US
dc.titleIndium-rich InAlN films on GaN/sapphire by molecular beam epitaxyen_US
dc.identifier.doi10.1088/2053-1591/1/1/015904en_US
dc.identifier.journalMATERIALS RESEARCH EXPRESSen_US
dc.citation.volume1en_US
dc.citation.issue1en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000209665100077en_US
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