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dc.contributor.authorChen, Po-Hsunen_US
dc.contributor.authorChang, Kuan-Changen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorTsai, Tsung-Mingen_US
dc.contributor.authorPan, Chih-Hungen_US
dc.contributor.authorLin, Chih-Yangen_US
dc.contributor.authorJin, Fu-Yuanen_US
dc.contributor.authorChen, Min-Chenen_US
dc.contributor.authorHuang, Hui-Chunen_US
dc.contributor.authorWang, Ming-Huien_US
dc.contributor.authorLo, Ikaien_US
dc.contributor.authorZheng, Jin-Chengen_US
dc.contributor.authorSze, Simon M.en_US
dc.date.accessioned2017-04-21T06:55:32Z-
dc.date.available2017-04-21T06:55:32Z-
dc.date.issued2016-05en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2016.2548499en_US
dc.identifier.urihttp://hdl.handle.net/11536/133633-
dc.description.abstractThis letter investigates the characteristics of doping gadolinium (Gd) in an indium-tin-oxide (ITO) electrode in HfO2-based resistive random access memory (RRAM). Identical bottom electrodes and insulators were made but then capped by either pure ITO or a Gd: ITO top electrode. Doping Gd in the ITO electrode produces lower operation currents in both high-resistance state (HRS) and low-resistance state (LRS) as well as enlarging the memory window. This excellent performance suggests a remarkable potential to improve RRAM applications. Schottky emission mechanism dominates both HRS and LRS according to current fitting results, and is confirmed by temperature effect experiments. The resistive switching behavior of the Gd:ITO device is explained by our model and is also confirmed by material analysis and electrical measurements. Furthermore, reliability tests verify the Gd: ITO device\'s capability to perform data storage as a nonvolatile memory.en_US
dc.language.isoen_USen_US
dc.subjectResistive random access memory (RRAM)en_US
dc.subjectindium-tin-oxide (ITO)en_US
dc.subjectgadolinium (Gd)en_US
dc.subjectelectrodeen_US
dc.titleImproving Performance by Doping Gadolinium Into the Indium-Tin-Oxide Electrode in HfO2-Based Resistive Random Access Memoryen_US
dc.identifier.doi10.1109/LED.2016.2548499en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume37en_US
dc.citation.issue5en_US
dc.citation.spage584en_US
dc.citation.epage587en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000374868300015en_US
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