標題: Evaluation of thermal performance of packaged GaN HEMT cascode power switch by transient thermal testing
作者: Chen, Szu-Hao
Chou, Po-Chien
Cheng, Stone
機械工程學系
Department of Mechanical Engineering
關鍵字: GaN-HEMT cascode switch;Power semiconductor device;Real power analysis;Transient thermal impedance;Thermal resistance;Thermal capacitance
公開日期: 5-四月-2016
摘要: In this investigation, thermal transient measurements and analyses are used to study the thermal performance of a cascoded GaN power device. The method is based on the thermal characterization of the on-resistance (R-on) of the device and the synchronized current-voltage characteristics under continuous operation. The changes in R-on with temperature (25 degrees C-180 degrees C) are measured, statistically studied, and correlations investigated. The proposed method for estimating transient thermal impedance has the following characteristics: (1) it is robust and reproducible; (2) it yields a heating curve to prevent overheating for the device under test (DUT); (3) it provides in-situ current-voltage characterization; (4) it includes a transient offset correction for initial transient electrical disturbances (such as current collapse); (5) it optimizes a compact thermal model; (6) it is sensitive to package structure and design variables. This monitoring of thermal impedance variation provides a simple and fast non-destructive method for analyzing power switching devices during thermal testing. Satisfactory experimental results confirm the feasibility of in-situ current-voltage characterization and the real power varies with the thermal impedance. (C) 2015 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.applthermaleng.2015.12.110
http://hdl.handle.net/11536/133664
ISSN: 1359-4311
DOI: 10.1016/j.applthermaleng.2015.12.110
期刊: APPLIED THERMAL ENGINEERING
Volume: 98
起始頁: 1003
結束頁: 1012
顯示於類別:期刊論文