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dc.contributor.authorChen, JMen_US
dc.contributor.authorLu, KTen_US
dc.contributor.authorLee, JMen_US
dc.contributor.authorHo, SCen_US
dc.contributor.authorChang, HWen_US
dc.date.accessioned2019-04-03T06:42:51Z-
dc.date.available2019-04-03T06:42:51Z-
dc.date.issued2005-09-01en_US
dc.identifier.issn2469-9926en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevA.72.032706en_US
dc.identifier.urihttp://hdl.handle.net/11536/13366-
dc.description.abstractState-specific dissociation dynamics for excited fragments of gaseous SiCl4 following Cl 2p and Si 2p core-level excitations were characterized by the dispersed UV/optical fluorescence spectroscopy. The core-to-Rydberg excitations at both Si 2p and Cl 2p edges lead to a noteworthy production of excited atomic fragments, neutral and ionic (Si-*,Si+*). In particular, the excited neutral atomic fragments Si-* are significantly reinforced. The core-to-valence excitation at the Si 2p edge generates an enhancement of excited molecular-ion SiCl4+. The experimental results provide deeper insight into the dissociation dynamics for excited neutral fragments of molecules via core-level excitation.en_US
dc.language.isoen_USen_US
dc.titleDissociation dynamics of excited neutral fragments of gaseous SiCl4 following Si 2p and Cl 2p core-level excitationsen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevA.72.032706en_US
dc.identifier.journalPHYSICAL REVIEW Aen_US
dc.citation.volume72en_US
dc.citation.issue3en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000232228300086en_US
dc.citation.woscount6en_US
Appears in Collections:Articles


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