完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chen, JM | en_US |
dc.contributor.author | Lu, KT | en_US |
dc.contributor.author | Lee, JM | en_US |
dc.contributor.author | Ho, SC | en_US |
dc.contributor.author | Chang, HW | en_US |
dc.date.accessioned | 2019-04-03T06:42:51Z | - |
dc.date.available | 2019-04-03T06:42:51Z | - |
dc.date.issued | 2005-09-01 | en_US |
dc.identifier.issn | 2469-9926 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1103/PhysRevA.72.032706 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/13366 | - |
dc.description.abstract | State-specific dissociation dynamics for excited fragments of gaseous SiCl4 following Cl 2p and Si 2p core-level excitations were characterized by the dispersed UV/optical fluorescence spectroscopy. The core-to-Rydberg excitations at both Si 2p and Cl 2p edges lead to a noteworthy production of excited atomic fragments, neutral and ionic (Si-*,Si+*). In particular, the excited neutral atomic fragments Si-* are significantly reinforced. The core-to-valence excitation at the Si 2p edge generates an enhancement of excited molecular-ion SiCl4+. The experimental results provide deeper insight into the dissociation dynamics for excited neutral fragments of molecules via core-level excitation. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Dissociation dynamics of excited neutral fragments of gaseous SiCl4 following Si 2p and Cl 2p core-level excitations | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1103/PhysRevA.72.032706 | en_US |
dc.identifier.journal | PHYSICAL REVIEW A | en_US |
dc.citation.volume | 72 | en_US |
dc.citation.issue | 3 | en_US |
dc.citation.spage | 0 | en_US |
dc.citation.epage | 0 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000232228300086 | en_US |
dc.citation.woscount | 6 | en_US |
顯示於類別: | 期刊論文 |