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dc.contributor.authorGao, Pengen_US
dc.contributor.authorLiu, Heng-Juien_US
dc.contributor.authorHuang, Yen-Linen_US
dc.contributor.authorChu, Ying-Haoen_US
dc.contributor.authorIshikawa, Ryoen_US
dc.contributor.authorFeng, Binen_US
dc.contributor.authorJiang, Yingen_US
dc.contributor.authorShibata, Naoyaen_US
dc.contributor.authorWang, En-Geen_US
dc.contributor.authorIkuhara, Yuichien_US
dc.date.accessioned2019-04-03T06:42:33Z-
dc.date.available2019-04-03T06:42:33Z-
dc.date.issued2016-04-01en_US
dc.identifier.issn2041-1723en_US
dc.identifier.urihttp://dx.doi.org/10.1038/ncomms11318en_US
dc.identifier.urihttp://hdl.handle.net/11536/133670-
dc.description.abstractAt the ferroelectric surface, the broken translational symmetry induced bound charge should significantly alter the local atomic configurations. Experimentally revealing the atomic structure of ferroelectric surface, however, is very challenging due to the strong spatial variety between nano-sized domains, and strong interactions between the polarization and other structural parameters. Here, we study surface structures of Pb(Zr0.2Ti0.8)O-3 thin film by using the annular bright-field imaging. We find that six atomic layers with suppressed polarization and a charged 180 degrees domain wall are at negatively poled surfaces, no reconstruction exists at positively poled surfaces, and seven atomic layers with suppressed polarization and a charged 90 degrees domain wall exist at nominally neutral surfaces in ferroelastic domains. Our results provide critical insights into engineering ferroelectric thin films, fine grain ceramics and surface chemistry devices. The state-of-the-art methodology demonstrated here can greatly advance our understanding of surface science for oxides.en_US
dc.language.isoen_USen_US
dc.titleAtomic mechanism of polarization-controlled surface reconstruction in ferroelectric thin filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1038/ncomms11318en_US
dc.identifier.journalNATURE COMMUNICATIONSen_US
dc.citation.volume7en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000374292400001en_US
dc.citation.woscount15en_US
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