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dc.contributor.authorChou, Yi-Chiaen_US
dc.contributor.authorPanciera, Federicoen_US
dc.contributor.authorReuter, Mark C.en_US
dc.contributor.authorStach, Eric A.en_US
dc.contributor.authorRoss, Frances M.en_US
dc.date.accessioned2017-04-21T06:55:43Z-
dc.date.available2017-04-21T06:55:43Z-
dc.date.issued2016en_US
dc.identifier.issn1359-7345en_US
dc.identifier.urihttp://dx.doi.org/10.1039/c6cc00303fen_US
dc.identifier.urihttp://hdl.handle.net/11536/133690-
dc.description.abstractWe visualize atomic level dynamics during Si nanowire growth using aberration corrected environmental transmission electron microscopy, and compare with lower pressure results from ultra-high vacuum microscopy. We discuss the importance of higher pressure observations for understanding growth mechanisms and describe protocols tominimize effects of the higher pressure background gas.en_US
dc.language.isoen_USen_US
dc.titleNanowire growth kinetics in aberration corrected environmental transmission electron microscopyen_US
dc.identifier.doi10.1039/c6cc00303fen_US
dc.identifier.journalCHEMICAL COMMUNICATIONSen_US
dc.citation.volume52en_US
dc.citation.issue33en_US
dc.citation.spage5686en_US
dc.citation.epage5689en_US
dc.contributor.department電機學院zh_TW
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000374349900007en_US
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