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dc.contributor.authorHsieh, Gen-Wenen_US
dc.contributor.authorWu, Jia-Yuanen_US
dc.contributor.authorOgata, Kenen_US
dc.contributor.authorCheng, Kuang-Yaoen_US
dc.date.accessioned2017-04-21T06:55:52Z-
dc.date.available2017-04-21T06:55:52Z-
dc.date.issued2016-08en_US
dc.identifier.issn1566-1199en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.orgel.2016.05.020en_US
dc.identifier.urihttp://hdl.handle.net/11536/133715-
dc.description.abstractWe investigate a dual layer active channel of random distributed intrinsic silicon nanowires and solution processing semiconducting polythiophene polymers for organic-based field effect transistors. Primary results show that low density silicon nanowire networks could enhance the effective charge carrier mobility of polythiophene transistors by a factor of six, suggesting that these nanowires act as rapid one-dimensional charge transport bridges in the active channel. Moreover, increasing the nanowire loading in the dual layer nanocomposite could further lessen the transistor hysteresis. The lifetime test of nanowire-polythiophene devices is found to be more sustainable with respect to that of pristine polythiophene in ambient air. These results indicate that semiconducting nanowires should be considered as a viable additive to active channel for next-generation organic field effect transistors. (C) 2016 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectField effect transistoren_US
dc.subjectNanowireen_US
dc.subjectPolythiopheneen_US
dc.subjectNanocompositeen_US
dc.titleDual layer semiconducting nanocomposite of silicon nanowire and polythiophene for organic-based field effect transistorsen_US
dc.identifier.doi10.1016/j.orgel.2016.05.020en_US
dc.identifier.journalORGANIC ELECTRONICSen_US
dc.citation.volume35en_US
dc.citation.spage158en_US
dc.citation.epage163en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000377409800022en_US
Appears in Collections:Articles