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dc.contributor.authorHsieh, Ting-Enen_US
dc.contributor.authorLin, Yueh-Chinen_US
dc.contributor.authorChu, Chung-Mingen_US
dc.contributor.authorChuang, Yu-Linen_US
dc.contributor.authorHuang, Yu-Xiangen_US
dc.contributor.authorShi, Wang-Chengen_US
dc.contributor.authorDee, Chang-Fuen_US
dc.contributor.authorMajlis, Burhanuddin Yeopen_US
dc.contributor.authorLee, Wei-Ien_US
dc.contributor.authorChang, Edward Yien_US
dc.date.accessioned2017-04-21T06:55:56Z-
dc.date.available2017-04-21T06:55:56Z-
dc.date.issued2016-07en_US
dc.identifier.issn0361-5235en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s11664-016-4534-1en_US
dc.identifier.urihttp://hdl.handle.net/11536/133725-
dc.description.abstractIn this study, an Au-free AlGaN/GaN high-electron-mobility transistor (HEMT) with Ti/Al/W ohmic and WNx Schottky metal structures is fabricated and characterized. The device exhibits smooth surface morphology after metallization and shows excellent direct-current (DC) characteristics. The device also demonstrates better performance than the conventional HEMTs under high voltage stress. Furthermore, the Au-free AlGaN/GaN HEMT shows stable device performance after annealing at 400A degrees C. Thus, the Ti/Al/W ohmic and WN (X) Schottky metals can be applied in the manufacturing of GaN HEMT to replace the Au based contacts to reduce the manufacturing costs of the GaN HEMT devices with comparable device performance.en_US
dc.language.isoen_USen_US
dc.subjectGaN HEMTen_US
dc.subjectAu-freeen_US
dc.subjectWNX metalen_US
dc.subjecthigh-voltage stressen_US
dc.subjectSchottky barrier heighten_US
dc.titleAu-Free GaN High-Electron-Mobility Transistor with Ti/Al/W Ohmic and WN (X) Schottky Metal Structures for High-Power Applicationsen_US
dc.identifier.doi10.1007/s11664-016-4534-1en_US
dc.identifier.journalJOURNAL OF ELECTRONIC MATERIALSen_US
dc.citation.volume45en_US
dc.citation.issue7en_US
dc.citation.spage3285en_US
dc.citation.epage3289en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department光電系統研究所zh_TW
dc.contributor.department電子物理學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentInstitute of Photonic Systemen_US
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000377434100006en_US
Appears in Collections:Articles