标题: | Au-Free GaN High-Electron-Mobility Transistor with Ti/Al/W Ohmic and WN (X) Schottky Metal Structures for High-Power Applications |
作者: | Hsieh, Ting-En Lin, Yueh-Chin Chu, Chung-Ming Chuang, Yu-Lin Huang, Yu-Xiang Shi, Wang-Cheng Dee, Chang-Fu Majlis, Burhanuddin Yeop Lee, Wei-I Chang, Edward Yi 材料科学与工程学系 光电系统研究所 电子物理学系 电子工程学系及电子研究所 Department of Materials Science and Engineering Institute of Photonic System Department of Electrophysics Department of Electronics Engineering and Institute of Electronics |
关键字: | GaN HEMT;Au-free;WNX metal;high-voltage stress;Schottky barrier height |
公开日期: | 七月-2016 |
摘要: | In this study, an Au-free AlGaN/GaN high-electron-mobility transistor (HEMT) with Ti/Al/W ohmic and WNx Schottky metal structures is fabricated and characterized. The device exhibits smooth surface morphology after metallization and shows excellent direct-current (DC) characteristics. The device also demonstrates better performance than the conventional HEMTs under high voltage stress. Furthermore, the Au-free AlGaN/GaN HEMT shows stable device performance after annealing at 400A degrees C. Thus, the Ti/Al/W ohmic and WN (X) Schottky metals can be applied in the manufacturing of GaN HEMT to replace the Au based contacts to reduce the manufacturing costs of the GaN HEMT devices with comparable device performance. |
URI: | http://dx.doi.org/10.1007/s11664-016-4534-1 http://hdl.handle.net/11536/133725 |
ISSN: | 0361-5235 |
DOI: | 10.1007/s11664-016-4534-1 |
期刊: | JOURNAL OF ELECTRONIC MATERIALS |
Volume: | 45 |
Issue: | 7 |
起始页: | 3285 |
结束页: | 3289 |
显示于类别: | Articles |