标题: Au-Free GaN High-Electron-Mobility Transistor with Ti/Al/W Ohmic and WN (X) Schottky Metal Structures for High-Power Applications
作者: Hsieh, Ting-En
Lin, Yueh-Chin
Chu, Chung-Ming
Chuang, Yu-Lin
Huang, Yu-Xiang
Shi, Wang-Cheng
Dee, Chang-Fu
Majlis, Burhanuddin Yeop
Lee, Wei-I
Chang, Edward Yi
材料科学与工程学系
光电系统研究所
电子物理学系
电子工程学系及电子研究所
Department of Materials Science and Engineering
Institute of Photonic System
Department of Electrophysics
Department of Electronics Engineering and Institute of Electronics
关键字: GaN HEMT;Au-free;WNX metal;high-voltage stress;Schottky barrier height
公开日期: 七月-2016
摘要: In this study, an Au-free AlGaN/GaN high-electron-mobility transistor (HEMT) with Ti/Al/W ohmic and WNx Schottky metal structures is fabricated and characterized. The device exhibits smooth surface morphology after metallization and shows excellent direct-current (DC) characteristics. The device also demonstrates better performance than the conventional HEMTs under high voltage stress. Furthermore, the Au-free AlGaN/GaN HEMT shows stable device performance after annealing at 400A degrees C. Thus, the Ti/Al/W ohmic and WN (X) Schottky metals can be applied in the manufacturing of GaN HEMT to replace the Au based contacts to reduce the manufacturing costs of the GaN HEMT devices with comparable device performance.
URI: http://dx.doi.org/10.1007/s11664-016-4534-1
http://hdl.handle.net/11536/133725
ISSN: 0361-5235
DOI: 10.1007/s11664-016-4534-1
期刊: JOURNAL OF ELECTRONIC MATERIALS
Volume: 45
Issue: 7
起始页: 3285
结束页: 3289
显示于类别:Articles