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dc.contributor.authorHuang, Yu Lien_US
dc.contributor.authorDing, Zijingen_US
dc.contributor.authorZhang, Wenjingen_US
dc.contributor.authorChang, Yung-Huangen_US
dc.contributor.authorShi, Yumengen_US
dc.contributor.authorLi, Lain-Jongen_US
dc.contributor.authorSong, Zhiboen_US
dc.contributor.authorZheng, Yu Jieen_US
dc.contributor.authorChi, Dongzhien_US
dc.contributor.authorQuek, Su Yingen_US
dc.contributor.authorWee, Andrew T. S.en_US
dc.date.accessioned2017-04-21T06:55:23Z-
dc.date.available2017-04-21T06:55:23Z-
dc.date.issued2016-06en_US
dc.identifier.issn1530-6984en_US
dc.identifier.urihttp://dx.doi.org/10.1021/acs.nanolett.6b00888en_US
dc.identifier.urihttp://hdl.handle.net/11536/133738-
dc.description.abstractTwo-dimensional (2D) transition metal dichalcogenides (TMDs) have revealed many novel properties of interest to future device applications. In particular, the presence of grain boundaries (GBs) can significantly influence the material properties of 2D TMDs. However, direct characterization of the electronic properties of the GB defects at the atomic scale remains extremely challenging. In this study, we employ scanning tunneling microscopy and spectroscopy to investigate the atomic and electronic structure of low-angle GBs of monolayer tungsten diselenide (WSe2) with misorientation angles of 3-6 degrees. Butterfly features are observed along the GBs, with the periodicity depending on the misorientation angle. Density functional theory calculations show that these butterfly; features correspond to gap states that arise in tetragonal dislocation cores and extend to distorted six-membered rings around the dislocation core. Understanding the nature of GB defects and their influence on transport and other device properties highlights the importance of defect engineering in future 2D device fabrication.en_US
dc.language.isoen_USen_US
dc.subjectSTM/STSen_US
dc.subjectmonolayer WSe2en_US
dc.subjectlow-angle grain boundariesen_US
dc.subjectdislocation coreen_US
dc.subjectgap statesen_US
dc.subjectfirst-principles calculationsen_US
dc.titleGap States at Low-Angle Grain Boundaries in Monolayer Tungsten Diselenideen_US
dc.identifier.doi10.1021/acs.nanolett.6b00888en_US
dc.identifier.journalNANO LETTERSen_US
dc.citation.volume16en_US
dc.citation.issue6en_US
dc.citation.spage3682en_US
dc.citation.epage3688en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000377642700040en_US
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