Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Szu-Ping | en_US |
dc.contributor.author | Liu, Shuang-De | en_US |
dc.contributor.author | Chan, Ting-Shan | en_US |
dc.contributor.author | Chen, Teng-Ming | en_US |
dc.date.accessioned | 2017-04-21T06:55:22Z | - |
dc.date.available | 2017-04-21T06:55:22Z | - |
dc.date.issued | 2016-04-13 | en_US |
dc.identifier.issn | 1944-8244 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1021/acsami.5b12125 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/133810 | - |
dc.description.abstract | Novel Ce3+- and Eu2+-doped lanthanum bromothiosilicate La3Br(SiS4)(2):Ce3+ and La3Br(SiS4)(2):Eu2+ phosphors were prepared by solid-state reaction in an evacuated and sealed quartz glass ampule. The La3Br(SiS4)(2):Ce3+ phosphor generates a cyan emission upon excitation at 375 nm, whereas the La3Br(SiS4)(2):Eu2+ phosphor could be excited with extremely broad range from UV to blue region (300 to 600 nm) and generates a reddish-orange broadband emission centered at 640 nm. In addition, thermal luminescence properties of La3Br(SiS4)(2):Ce3+ and La3Br(SiS4)(2):Eu2+ phosphors from 20 to 200 degrees C were investigated. The combination of a 450 nm blue InGaN-based LED chip with the red-emitting La3Br(SiS4)(2):Eu2+ phosphor, and green-emitting BOSE:Eu2+ commercial phosphor produced a warm-white light with the CRI value of similar to 95 and the CCT of 5,120 K. Overall, these results show that the prepared phosphors may have potential applications in pc-WLED. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | thiosilicate phosphor | en_US |
dc.subject | rare-earth activator | en_US |
dc.subject | luminescence | en_US |
dc.subject | light emitting diodes | en_US |
dc.subject | solid-state lighting | en_US |
dc.title | Synthesis and Luminescence Properties of Novel Ce3+- and Eu2+-Doped Lanthanum Bromothiosilicate La3Br(SiS4)(2) Phosphors for White LEDs | en_US |
dc.identifier.doi | 10.1021/acsami.5b12125 | en_US |
dc.identifier.journal | ACS APPLIED MATERIALS & INTERFACES | en_US |
dc.citation.volume | 8 | en_US |
dc.citation.issue | 14 | en_US |
dc.citation.spage | 9218 | en_US |
dc.citation.epage | 9223 | en_US |
dc.contributor.department | 應用化學系 | zh_TW |
dc.contributor.department | 應用化學系分子科學碩博班 | zh_TW |
dc.contributor.department | Department of Applied Chemistry | en_US |
dc.contributor.department | Institute of Molecular science | en_US |
dc.identifier.wosnumber | WOS:000374274900043 | en_US |
Appears in Collections: | Articles |