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dc.contributor.authorLee, Chao-Kueien_US
dc.contributor.authorLin, Yuan-Yaoen_US
dc.contributor.authorLin, Gong-Ruen_US
dc.contributor.authorWu, Chung-Lunen_US
dc.contributor.authorWu, Tsung-Hanen_US
dc.contributor.authorChuang, Chin-Jungen_US
dc.contributor.authorPan, Ci-Lingen_US
dc.date.accessioned2017-04-21T06:55:18Z-
dc.date.available2017-04-21T06:55:18Z-
dc.date.issued2016-03en_US
dc.identifier.issn2156-342Xen_US
dc.identifier.urihttp://dx.doi.org/10.1109/TTHZ.2016.2525819en_US
dc.identifier.urihttp://hdl.handle.net/11536/133821-
dc.description.abstractThe enhanced broadband THz radiation excited by pre-chirping the femtosecond pumping laser pulse is explored from a photoconductive antenna made by the low-temperature molecular-beam-epitaxy (LT-MBE) grown Gallium Arsenide (GaAs). Nearly 3-dB enlargement on peak amplitude of THz radiation accompanied with broadened bandwidth is achieved with positively chirped pulse excitation. The laser with short pulsewidth assists the broadening of THz bandwidth, whereas the peak intensity of THz relies strictly on lengthened carrier lifetime. The enhancement of high-frequency radiation components at low pumping intensity also indicates the nature of power dependence in such a coherently controlled process. When photocurrent saturation occurs in the LT-MBE-grown GaAs under high-power pumping condition, the clipping effect on peak amplitude of current pulse lengthens the duration of current surge effect. Both the peak intensity and the frequency spectrum of the generated THz pulse concurrently declines. The physical mechanism related to pre-chirped pulse excitation dependent carrier dynamics is proposed to elucidate the spectral response as well as the power dependence in such a coherently controlled THz radiation process.en_US
dc.language.isoen_USen_US
dc.subjectChirpingen_US
dc.subjectpulse shapingen_US
dc.subjectspectroscopyen_US
dc.subjectterahertzen_US
dc.subjectultrafast measurementsen_US
dc.titlePre-Chirped Pulse Excitation Enhanced Terahertz Radiationen_US
dc.identifier.doi10.1109/TTHZ.2016.2525819en_US
dc.identifier.journalIEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGYen_US
dc.citation.volume6en_US
dc.citation.issue2en_US
dc.citation.spage253en_US
dc.citation.epage261en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000377683400009en_US
Appears in Collections:Articles