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dc.contributor.authorHsu, Hsiao-Hsuanen_US
dc.contributor.authorCheng, Chun-Huen_US
dc.contributor.authorChiou, Pingen_US
dc.contributor.authorChiu, Yu-Chienen_US
dc.contributor.authorYen, Shiang-Shiouen_US
dc.contributor.authorTung, Chien-Hungen_US
dc.contributor.authorChang, Chun-Yenen_US
dc.date.accessioned2017-04-21T06:55:19Z-
dc.date.available2017-04-21T06:55:19Z-
dc.date.issued2015-06en_US
dc.identifier.issn1551-319Xen_US
dc.identifier.urihttp://dx.doi.org/10.1109/JDT.2014.2355876en_US
dc.identifier.urihttp://hdl.handle.net/11536/133830-
dc.description.abstractThis paper reports an InGaZnO thin-film transistor involving a wide bandgap gate dielectric of ZrO2 and IGZO/TiOx channel stack. According to our experimental results, the IGZO TFT with a thin TiOx channel capping layer shows good device integrity of a low threshold voltage of 0.37 V, a small sub-threshold swing of 77 mV/decade, and a high mobility of 33 cm(2)/V.s under a low drive voltage of < 2 V. We also demonstrate that the significantly improved electrical property is mainly contributed by the enhanced channel electric field after TiOx capping, associated with maximizing charge accumulated capability. The favorable high-temperature transfer characteristics are also obtained in IGZO/TiOx TFT, indicating a weak Fermi-level pinning in IGZO/TiOx channel structure. With the operating temperature increasing further, the thermal activated effect shall dominate IGZO channel property beyond percolation conduction.en_US
dc.language.isoen_USen_US
dc.subjectIndium-gallium-zinc oxide (IGZO)en_US
dc.subjectthin-film transistor (TFT)en_US
dc.subjecttitanium oxide (TiOx)en_US
dc.subjectzirconium oxide (ZrO2)en_US
dc.titleTemperature-Dependent Transfer Characteristics of Low Turn-On Voltage InGaZnO Metal-Oxide Devices With Thin Titanium Oxide Capping Layersen_US
dc.identifier.doi10.1109/JDT.2014.2355876en_US
dc.identifier.journalJOURNAL OF DISPLAY TECHNOLOGYen_US
dc.citation.volume11en_US
dc.citation.issue6en_US
dc.citation.spage512en_US
dc.citation.epage517en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000376179800003en_US
Appears in Collections:Articles