标题: | Temperature-Dependent Transfer Characteristics of Low Turn-On Voltage InGaZnO Metal-Oxide Devices With Thin Titanium Oxide Capping Layers |
作者: | Hsu, Hsiao-Hsuan Cheng, Chun-Hu Chiou, Ping Chiu, Yu-Chien Yen, Shiang-Shiou Tung, Chien-Hung Chang, Chun-Yen 电子工程学系及电子研究所 Department of Electronics Engineering and Institute of Electronics |
关键字: | Indium-gallium-zinc oxide (IGZO);thin-film transistor (TFT);titanium oxide (TiOx);zirconium oxide (ZrO2) |
公开日期: | 六月-2015 |
摘要: | This paper reports an InGaZnO thin-film transistor involving a wide bandgap gate dielectric of ZrO2 and IGZO/TiOx channel stack. According to our experimental results, the IGZO TFT with a thin TiOx channel capping layer shows good device integrity of a low threshold voltage of 0.37 V, a small sub-threshold swing of 77 mV/decade, and a high mobility of 33 cm(2)/V.s under a low drive voltage of < 2 V. We also demonstrate that the significantly improved electrical property is mainly contributed by the enhanced channel electric field after TiOx capping, associated with maximizing charge accumulated capability. The favorable high-temperature transfer characteristics are also obtained in IGZO/TiOx TFT, indicating a weak Fermi-level pinning in IGZO/TiOx channel structure. With the operating temperature increasing further, the thermal activated effect shall dominate IGZO channel property beyond percolation conduction. |
URI: | http://dx.doi.org/10.1109/JDT.2014.2355876 http://hdl.handle.net/11536/133830 |
ISSN: | 1551-319X |
DOI: | 10.1109/JDT.2014.2355876 |
期刊: | JOURNAL OF DISPLAY TECHNOLOGY |
Volume: | 11 |
Issue: | 6 |
起始页: | 512 |
结束页: | 517 |
显示于类别: | Articles |